NDS0605 general description features ____________ _______________________________________________________________________________ absolute maximum ratings t a = 25c unless otherwise noted symbol parameter NDS0605 units v dss drain-source voltage -60 v v dgr drain-gate voltage (r gs < 1 m w ) -60 v v gss gate-source voltage - continuous 20 v i d drain current - continuous -0.18 a - pulsed -1 p d maximum power dissipation t a = 25 c 0.36 w derate above 25 c 2.9 mw/ o c t j ,t stg operating and storage temperature range -55 to 15 0 c t l maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 300 c thermal characteristics r q ja thermal resistance, junction-to-ambient 350 c/w these p-c hannel enhancement mode power field effect transistors are produced using fairchild's proprietary, high cell density, dmos technology. this very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. they can be used, with a minimum of effort, in most applications requiring up to 0.18a dc and can deliver pulsed currents up to 1a. this product is particularly suited to low voltage applications requiring a low current high side switch. -0.18 a, -60v. r ds(on ) = 5 w @ v gs = -10v. voltage controlled p-channel small signal switch. high density cell design for low r ds(on) . high saturation current . d s g 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -10 a -60 v i dss zero gate voltage drain current v ds = -48 v , v gs = 0 v -1 a t j = 125c -500 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = -250 a -1 -3 v t j = 125c -0.6 -2.8 r ds(on) static drain-source on-resistance v gs = -10 v, i d = -0.5 a 5 w t j = 125c 10 v gs = -4.5 v, i d = -0.25 a 7.5 t j = 125c 15 i d (on) on-state drain current v gs = -10 v, v ds = -10 v -0.6 a v gs = -4.5 v, v ds = -10 v -0.25 g fs forward transconductance v ds = -10 v, i d = -0.2 a 0.07 s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz 60 pf c oss output capacitance 25 pf c rss reverse transfer capacitance 5 pf switching ch aracteristics (note 1) t d(on) turn - on delay time v dd = -30 v, i d = -0.2 a , v gs = -10 v, r gen = 25 w 10 ns t r turn - on rise time 15 ns t d(off) turn - off delay time 15 ns t f turn - off fall time 20 ns drain-source diode characteristics i s continuous source diode current -0.18 a i sm maximum pulsed source diode current (note 1) -1 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.5 a (note 1) -1.5 v t j = 125c -1.3 note : 1. pulse test: pulse width < 300 s, duty cycle < 2.0% . 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 NDS0605 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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